- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
21 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
7,732
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT PCh -12V -16A 7mOhm 91nC | 8 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | 91 nC | |||||||
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Ein Angebot |
5,197
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT PCh -12V -16A 7mOhm 91nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | - 0.9 V | 91 nC | ||||||
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Ein Angebot |
5,722
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 8 mOhms | Enhancement | OptiMOS | ||||
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Ein Angebot |
2,484
Verfügbar auf Lager
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Infineon Technologies | MOSFET 1 P-CH -12V HEXFET 7mOhms 91nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | 91 nC | Enhancement | ||||
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Ein Angebot |
171
Verfügbar auf Lager
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IXYS | MOSFET -16.0 Amps -600V 0.720 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 16 A | 720 mOhms | - 4 V | 92 nC | Enhancement | PolarP | ||
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Ein Angebot |
1,385
Verfügbar auf Lager
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Vishay / Siliconix | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 0.018 Ohms | - 2.5 V | 26 nC | Enhancement | TrenchFET | ||
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Ein Angebot |
2,805
Verfügbar auf Lager
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Vishay / Siliconix | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 0.014 Ohms | - 1 V | 75 nC | Enhancement | TrenchFET | ||
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siehe | IXYS | MOSFET -16.0 Amps -600V 0.720 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 16 A | 720 mOhms | - 4 V | 92 nC | Enhancement | PolarP | |||
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Ein Angebot |
23,995
Verfügbar auf Lager
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Vishay Semiconductors | MOSFET 60V 16A 53W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 16 A | 0.05 Ohms | - 2.5 V | 38 nC | Enhancement | TrenchFET | ||
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Ein Angebot |
395
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT P-Ch -30V -16A 6.6mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 16 A | 10.2 mOhms | 31 nC | ||||||||
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Ein Angebot |
3,000
Verfügbar auf Lager
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Micro Commercial Components (MCC) | MOSFET 16A,12V,P Channel Mosfet | +/- 8 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 27 mOhms | - 1 V | 60 nC | Enhancement | |||
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Ein Angebot |
47,999
Verfügbar auf Lager
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Vishay Semiconductors | MOSFET 40V 16A 62.5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 16 A | 0.02 Ohms | - 2.5 V | 21.2 nC | Enhancement | TrenchFET | ||
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Ein Angebot |
5,000
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET 4V Drive Pch MOSFET Drive Pch | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 45 V | - 16 A | - 3 V | 16 nC | |||||||
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siehe | IXYS | MOSFET -16 Amps -200V 0.16 Rds | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | P-Channel | - 200 V | - 16 A | 160 mOhms | ||||||||||
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Ein Angebot |
4
Verfügbar auf Lager
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IXYS | MOSFET -16 Amps -200V 0.22 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 16 A | 160 mOhms | - 5 V | 95 nC | Enhancement | |||
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siehe | Vishay / Siliconix | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 16 A | 0.05 Ohms | - 2.5 V | 38 nC | Enhancement | ||||
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siehe | Vishay / Siliconix | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 16 A | 0.02 Ohms | - 2.5 V | 21.2 nC | Enhancement | ||||
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siehe | Vishay / Siliconix | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 0.014 Ohms | - 1 V | 75 nC | Enhancement | ||||
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siehe | ROHM Semiconductor | MOSFET P Chan-45V+/-16A 4V Drive | +/- 20 V | SMD/SMT | Reel | 1 Channel | Si | P-Channel | - 45 V | - 16 A | 35 mOhms | - 2.5 V | 17 nC | ||||||||
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Ein Angebot |
1,012
Verfügbar auf Lager
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Infineon / IR | MOSFET 1 P-CH -30V HEXFET 6.6mOhms 31nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 16 A | 10.2 mOhms | 31 nC | ||||||||
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siehe | Toshiba | MOSFET N-Ch -30V FET 4800pF -16A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 6.9 mOhms |
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