- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
16 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,690
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 39 A | 36 mOhms | 73.3 nC | ||||||||
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Ein Angebot |
8,295
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
7,878
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
5,069
Verfügbar auf Lager
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ON Semiconductor | MOSFET NFET SO8FL 60V 39A 15MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 39 A | 15.2 mOhms | 1.5 V | 21 nC | |||||
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Ein Angebot |
4,360
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
4,594
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
3,000
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 2.8 mOhms | 1 V | 72 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 39 A | 2 mOhms | 39 nC | Directfet | ||||||||
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siehe | Nexperia | MOSFET TRENCH-200 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 57 mOhms | Enhancement | |||||||
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siehe | Nexperia | MOSFET TAPE13 MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 39 A | 57 mOhms | Enhancement | |||||||
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siehe | Nexperia | MOSFET N-channel 80 V 25 mo FET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 16.7 mOhms | 3 V | 25.9 nC | Enhancement | |||||
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siehe | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | |||||||
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siehe | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | HyperFET | ||||||
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siehe | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | |||||||
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siehe | Infineon Technologies | MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 1.2 mOhms | Enhancement | OptiMOS | ||||||
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siehe | Infineon / IR | MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC | 20 V | SMD/SMT | DirectFET-S1 | Reel | 1 Channel | Si | N-Channel | 25 V | 39 A | 10.1 mOhms | 8.1 nC |
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