- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
33 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,345
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 80V 39A 28mOhm 22nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 28 mOhms | 2.5 V | 33 nC | ||||
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Ein Angebot |
2,690
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 39 A | 36 mOhms | 73.3 nC | |||||||
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Ein Angebot |
2,429
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET SINGLE N-CH 200V ULTRAFET TRENCH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 66 mOhms | Enhancement | |||||
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Ein Angebot |
8,295
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
7,878
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,839
Verfügbar auf Lager
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 28mOhms 22nC | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 30 mOhms | 22 nC | |||||||
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Ein Angebot |
4,834
Verfügbar auf Lager
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Nexperia | MOSFET TAPE13 PWR-MOS | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 39 A | 39 mOhms | Enhancement | |||||
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Ein Angebot |
5,069
Verfügbar auf Lager
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ON Semiconductor | MOSFET NFET SO8FL 60V 39A 15MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 39 A | 15.2 mOhms | 1.5 V | 21 nC | ||||
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Ein Angebot |
641
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 200V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 56 mOhms | Enhancement | |||||
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Ein Angebot |
197
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 39 A | 68 mOhms | 2.5 V | 116 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
4,360
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
230
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 39 A | 68 mOhms | 2.5 V | 116 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
4,594
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
838
Verfügbar auf Lager
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Infineon / IR | MOSFET 80V 30A 28 mOhm Auto Logic Level MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 80 V | 39 A | 22.5 mOhms | 22 nC | ||||||||
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Ein Angebot |
393
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET UltraFET Power MOSFET | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 39 A | 28 mOhms | 1.6 V | 56 nC | ||||
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Ein Angebot |
4
Verfügbar auf Lager
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IXYS | MOSFET 36 Amps 800V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 39 A | 190 mOhms | 5 V | 200 nC | Enhancement | PolarHV, HiPerFET | ||
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Ein Angebot |
633
Verfügbar auf Lager
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Nexperia | MOSFET N-channel MOSFET logic level LFPAK33 | 1.95 V | SMD/SMT | LFPAK33-5 | Reel | 1 Channel | Si | N-Channel | 27 V | 39 A | 16.9 mOhms | ||||||||
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Ein Angebot |
347
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS | - 4 V to 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 650 V | 39 A | 60 mOhms | 5.6 V | 58 nC | Enhancement | |||
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Ein Angebot |
3,000
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 2.8 mOhms | 1 V | 72 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 39 A | 2 mOhms | 39 nC | Directfet | |||||||
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siehe | ON Semiconductor | MOSFET Pwr MOSFET 60V 39A 15mOhm SGL N-CH | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 39 A | 15 mOhms | ||||||||||
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siehe | Nexperia | MOSFET TRENCH-200 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 57 mOhms | Enhancement | ||||||
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siehe | ON Semiconductor | MOSFET NFET SO8FL 60V 39A 15MOHM | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 39 A | 15 mOhms | ||||||||||
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siehe | Infineon Technologies | MOSFET 80V 30A 28 mOhm Auto Logic Level MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 80 V | 39 A | 22.5 mOhms | ||||||||||
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siehe | Nexperia | MOSFET TAPE13 MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 39 A | 57 mOhms | Enhancement | ||||||
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siehe | Nexperia | MOSFET N-channel 80 V 25 mo FET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 16.7 mOhms | 3 V | 25.9 nC | Enhancement | ||||
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siehe | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | ||||||
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siehe | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | ||||||
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Ein Angebot |
545
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 600V 0.055 Ohm 39A Mdmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 39 A | 70 mOhms |
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