- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
36
Verfügbar auf Lager
|
IXYS | MOSFET 8 Amps 1500V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 7.5 A | 3.6 Ohms | 5 V | 250 nC | Enhancement | |||
|
|
Ein Angebot |
4
Verfügbar auf Lager
|
IXYS | MOSFET 8 Amps 1500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 8 A | 3.6 Ohms | 8 V | 250 nC | Enhancement | ||||
|
|
Ein Angebot |
56
Verfügbar auf Lager
|
IXYS | MOSFET Standard Linear Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Si | N-Channel | 1500 V | 8 A | 3.6 Ohms | 8 V | 250 nC | Enhancement | |||||
|
|
siehe | IXYS | MOSFET 3.6 Amps 800V 3.6 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.6 A | 3.6 Ohms | Enhancement | HyperFET | |||||
|
|
siehe | IXYS | MOSFET 3.6 Amps 800V 3.6 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.6 A | 3.6 Ohms | Enhancement | HyperFET |
1 / 1 Seite
