MOSFET - Inix Electronic

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3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	IRLL2705TRPBF	1+ $0.2960 10+ $0.2456 100+ $0.1584 1000+ $0.1268 2500+ $0.1072	Ein Angebot	PDF RFQ	4,956 Verfügbar auf Lager	Infineon Technologies	MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl	16 V	SMD/SMT	SOT-223-4			Reel	1 Channel	Si	N-Channel	55 V	3.8 A	65 mOhms		32 nC
	IRLL2705PBF	1+ $0.3200 10+ $0.2664 100+ $0.1720 1000+ $0.1376	Ein Angebot	PDF RFQ	3,606 Verfügbar auf Lager	Infineon Technologies	MOSFET 55V 1 N-CH HEXFET 40mOhms 32nC	16 V	SMD/SMT	SOT-223-4	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	55 V	3.8 A	40 mOhms	2 V	32 nC	Enhancement
	BSR202N L6327	1+ $0.1680 10+ $0.1396 100+ $0.0852 1000+ $0.0660 3000+ $0.0560	Ein Angebot	PDF RFQ	8,234 Verfügbar auf Lager	Infineon Technologies	MOSFET N-Ch 20V 3.8A SOT-23-3	12 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	20 V	3.8 A	21 mOhms			Enhancement

IRLL2705TRPBF

IRLL2705TRPBF

Infineon Technologies

MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl

Stock : 4,956

1+: $0.2960

10+: $0.2456

100+: $0.1584

1000+: $0.1268

2500+: $0.1072

IRLL2705PBF

IRLL2705PBF

Infineon Technologies

MOSFET 55V 1 N-CH HEXFET 40mOhms 32nC

Stock : 3,606

1+: $0.3200

10+: $0.2664

100+: $0.1720

1000+: $0.1376

BSR202N L6327

BSR202N L6327

Infineon Technologies

MOSFET N-Ch 20V 3.8A SOT-23-3

Stock : 8,234

1+: $0.1680

10+: $0.1396

100+: $0.0852

1000+: $0.0660

3000+: $0.0560

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