- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
19 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
4,733
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.8 A | 1.2 Ohms | Enhancement | |||||
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Ein Angebot |
14,541
Verfügbar auf Lager
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ON Semiconductor | MOSFET COMP 2X2 20V 3.8A 100mOhm | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 21 V, - 20 V | 3.8 A | 100 mOhms | Enhancement | |||||
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Ein Angebot |
7,302
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 30V Dual N-Channel | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 3.8 A | 123 mOhms | Enhancement | PowerTrench | |||||
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Ein Angebot |
4,956
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl | 16 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 3.8 A | 65 mOhms | 32 nC | |||||||
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Ein Angebot |
3,606
Verfügbar auf Lager
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 32nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 3.8 A | 40 mOhms | 2 V | 32 nC | Enhancement | |||
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Ein Angebot |
1,595
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET Dual 2A High-Speed Low-Side Gate Driver | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 3.8 A | 2.5 Ohms | 5 V | 8.3 nC | Enhancement | UniFET | ||
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Ein Angebot |
8,234
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 20V 3.8A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.8 A | 21 mOhms | Enhancement | |||||
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Ein Angebot |
1,787
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 | 3 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.95 Ohms | 4.5 V | 14 nC | |||||
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Ein Angebot |
1,084
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 3.8 A | 1.35 Ohms | Enhancement | QFET | ||||
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Ein Angebot |
2,198
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-Channel | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 28 V | 3.8 A | 72 mOhms | Enhancement | |||||
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Ein Angebot |
1,513
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 70V N-Channel 3.8A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 3.8 A | 130 mOhms | Enhancement | |||||
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Ein Angebot |
970
Verfügbar auf Lager
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Infineon / IR | MOSFET Automotive MOSFET 40 FET 40V, 5A, 65mOhm | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | Si | N-Channel | 55 V | 3.8 A | 40 mOhms | 2 V | 32 nC | Enhancement | ||||
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Ein Angebot |
3,000
Verfügbar auf Lager
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Diodes Incorporated | MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.8 A | 68 mOhms | 1.5 V | 10.6 nC | Enhancement | |||
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Ein Angebot |
9,600
Verfügbar auf Lager
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ON Semiconductor | MOSFET 65V SMARTFET | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 70 V | 3.8 A | 210 mOhms | |||||||||
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siehe | STMicroelectronics | MOSFET N-Ch 620 V 1.7 Ohm 3.8 A, SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.7 Ohms | 3.75 V | 22 nC | Enhancement | SuperMesh | |||
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Ein Angebot |
900
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 620 V 17 Pwr MOSFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 2 Ohms | 3.75 V | 22 nC | ||||
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siehe | STMicroelectronics | MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 2 Ohms | 22 nC | Enhancement | |||||
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siehe | STMicroelectronics | MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 2 Ohms | 22 nC | Enhancement | |||||
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siehe | STMicroelectronics | MOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3 | 3 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 3.8 A | 1.95 Ohms | 4.5 V | 14 nC |
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