1 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Ein Angebot |
519
Verfügbar auf Lager
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Infineon / IR | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-220AB-3 | + 175 C | Tube | 58 W | Single | 600 V | 2.2 V | 11 A | 100 nA | +/- 20 V |
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