- Hersteller :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.5 kW | Single | 1.2 kV | 1.8 V | 420 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.5 kW | Dual | 1.2 kV | 1.8 V | 420 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.5 kW | Single | 1.2 kV | 1.8 V | 420 A | 400 nA | |||
|
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siehe | Infineon Technologies | IGBT Modules 1200V 200A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1550 W | Dual | 1200 V | 2.1 V | 420 A | 400 nA |
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