- Package / Case :
- Collector-Emitter Saturation Voltage :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 385 W | Dual | 1.2 kV | 1.8 V | 110 A | 600 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 385 W | Dual | 1.2 kV | 1.85 V | 110 A | 600 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 385 W | Dual | 1.2 kV | 1.85 V | 110 A | 600 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 385 W | Dual | 1.2 kV | 1.85 V | 110 A | 600 nA |
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