- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
27 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Dual | 600 V | 1.5 V | 500 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 2.08 kW | Dual | 1.2 kV | 1.8 V | 610 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Dual | 1.7 kV | 2 V | 310 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.45 kW | Dual | 1.2 kV | 1.7 V | 440 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.05 kW | Single | 1.2 kV | 1.7 V | 300 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 2.08 kW | Single | 1.2 kV | 1.8 V | 610 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 1.7 kV | 2 V | 310 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.5 kW | Single | 1.2 kV | 1.8 V | 420 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 2.08 kW | Single | 1.2 kV | 1.8 V | 610 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 600 V | 1.5 V | 500 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.05 kW | Single | 1.2 kV | 1.7 V | 300 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 940 W | Single | 600 V | 1.5 V | 400 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 940 W | Single | 600 V | 1.5 V | 400 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.47 kW | Single | 1.7 kV | 2 V | 400 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.47 kW | Single | 1.7 kV | 2 V | 400 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.05 kW | Dual | 1.2 kV | 1.7 V | 300 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 940 W | Dual | 600 V | 1.5 V | 400 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 2.1 kW | Dual | 1.2 kV | 1.7 V | 580 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.47 kW | Dual | 1.7 kV | 2 V | 400 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.5 kW | Dual | 1.2 kV | 1.8 V | 420 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 3 kW | Single | 1.2 kV | 1.8 V | 840 A | 800 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.45 kW | Single | 1.2 kV | 1.7 V | 440 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.45 kW | Single | 1.2 kV | 1.7 V | 440 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 3 kW | Single | 1.2 kV | 1.8 V | 840 A | 800 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 1.7 kV | 2 V | 310 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.5 kW | Single | 1.2 kV | 1.8 V | 420 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 600 V | 1.5 V | 500 A | 400 nA |
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