- Package / Case :
- Pd - Power Dissipation :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Infineon Technologies | IGBT Modules 1200V 1200A IGBT Module | IHM 130X140-10 | + 125 C | 5 kW | Dual | 1200 V | 1.7 V | 1200 A | 400 nA | ||||
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siehe | Infineon Technologies | IGBT Modules 1200V 800A DUAL | IGBT Silicon Modules | IHM130 | + 125 C | 3.9 kW | Dual | 1200 V | 1.7 V | 1200 A | 400 nA |
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