- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
9 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | |
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siehe | NXP Semiconductors | RF MOSFET Transistors TAPE-7 MOS-RFSS | SMD/SMT | SOT-343R-4 | + 150 C | Reel | Si | N-Channel | 7 V, 7 V | 30 mA, 30 mA | - | |||
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siehe | NXP Semiconductors | RF MOSFET Transistors TAPE-7 MOS-RFSS | SMD/SMT | SOT-343R-4 | + 150 C | Reel | Si | N-Channel | 11 V, 11 V | 30 mA, 30 mA | - | |||
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siehe | NXP Semiconductors | RF MOSFET Transistors TAPE-7 MOS-RFSS | SMD/SMT | SOT-343R-4 | Reel | Si | Dual N-Channel | 7 V, 7 V | 40 mA, 40 mA | - | ||||
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siehe | NXP Semiconductors | RF MOSFET Transistors Dual N-Channel 7V 30mA 200mW | SMD/SMT | SOT-343R-4 | Reel | Si | Dual N-Channel | 7 V, 7 V | 30 mA, 30 mA | - | ||||
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siehe | NXP Semiconductors | RF MOSFET Transistors Dual N-Channel 7V 30mA 200mW | SMD/SMT | SOT-343R-4 | Reel | Si | Dual N-Channel | 7 V, 7 V | 30 mA, 30 mA | - | ||||
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siehe | NXP Semiconductors | RF MOSFET Transistors Dual N-Channel 7V 30mA 200mW | SMD/SMT | SOT-343R-4 | Reel | Si | Dual N-Channel | 7 V, 7 V | 30 mA, 30 mA | - | ||||
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siehe | NXP Semiconductors | RF MOSFET Transistors TAPE-7 MOS-RFSS | SMD/SMT | SOT-343R-4 | + 150 C | Reel | Si | Dual N-Channel | 7 V, 7 V | 40 mA, 40 mA | - | |||
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siehe | NXP Semiconductors | RF MOSFET Transistors Dual N-Channel 7V 40mA 280mW | SMD/SMT | SOT-343R-4 | Reel | Si | Dual N-Channel | 7 V, 7 V | 40 mA, 40 mA | - | ||||
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siehe | NXP Semiconductors | RF MOSFET Transistors Dual N-Channel 10V 30mA 200mW | SMD/SMT | SOT-343R-4 | Reel | Si | Dual N-Channel | 10 V, 10 V | 30 mA, 30 mA | - |
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