Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
9 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Gain
BLA6G1011-200R,112
20+
$104.3240
40+
$102.8640
siehe
RFQ
NXP Semiconductors RF MOSFET Transistors TRANS PWR LDMOS 200W SMD/SMT SOT-502A-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA6G1011LS-200RG,
20+
$104.3240
40+
$102.8640
siehe
RFQ
NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR SMD/SMT SOT-502C-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
Default Photo
150+
$34.8320
siehe
RFQ
NXP / Freescale RF MOSFET Transistors HV9 2GHz 45W NI1230-4S2L       Reel 200 W Si          
BLA1011S-200R,112
60+
$133.6320
siehe
RFQ
NXP Semiconductors RF MOSFET Transistors TRANS LDMOS NCH 75V SMD/SMT SOT-502B-3 + 150 C Tube 200 W Si N-Channel 75 V 150 mA 60 mOhms 13 dB
BLA6G1011L-200RG,1
20+
$104.3240
40+
$102.8640
siehe
RFQ
NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR SMD/SMT SOT-502D-3 + 150 C Tube 200 W Si N-Channel 65 V 49 A 930 mOhms 20 dB
BLA1011-200R,112
60+
$133.6320
siehe
RFQ
NXP Semiconductors RF MOSFET Transistors TRANS LDMOS NCH 75V SMD/SMT SOT-502A-3 + 150 C Tube 200 W Si N-Channel 75 V 150 mA 60 mOhms 13 dB
PTFA212001E V4 R250
250+
$49.0440
siehe
RFQ
Infineon Technologies RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... SMD/SMT H-36260-2 + 150 C Reel 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB
PTFA212001F V4 R250
siehe
RFQ
Infineon Technologies RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... SMD/SMT H-37260-2 + 150 C Reel 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB
PTFA212001E V4
siehe
RFQ
Infineon Technologies RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 SMD/SMT H-36260-2 + 150 C Tray 200 W Si N-Channel 65 V 1.6 A 50 mOhms 15.8 dB