- Ausgewählter Filter :
1 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Wolfspeed / Cree | RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt | SMD/SMT | + 107 C | Reel | 75 W | 52 W | GaN | N-Channel | 150 V | 10.4 A | - 10 V, 2 V | 14.5 dB | HEMT | 50 V |
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