- Packaging :
- Memory Type :
- Memory Size :
-
- 128K (16K x 8) (1)
- 128Kb (16K x 8) (7)
- 16Kb (2K x 8) (1)
- 16Kb (2K x 8, 1K x 16) (2)
- 1Gb (32M x 32) (1)
- 1Gb (64M x 16) (2)
- 1Kb (128 x 8, 64 x 16) (1)
- 1Mb (128K x 8) (11)
- 256Kb (32K x 8) (14)
- 2Gb (64M x 32) (3)
- 2Kb (256 x 8) (3)
- 32Kb (4K x 8) (6)
- 32Mb (2M x 16) (1)
- 4Gb (128M x 32) (4)
- 4Gb (256M x 16) (1)
- 4Kb (512 x 8) (1)
- 512Kb (64K x 8) (11)
- 64Kb (8K x 8) (13)
- 64Mb (4M x 16) (1)
- Access Time :
- Mounting Type :
- Part Status :
- Memory Format :
- Clock Frequency :
- Memory Interface :
- Ausgewählter Filter :
84 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Package / Case | Series | Packaging | Memory Type | Memory Size | Technology | Access Time | Mounting Type | Operating Temperature | Part Status | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Memory Interface | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | |
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siehe | Micron Technology Inc. | IC DRAM 4G PARALLEL 533MHZ | - | - | - | Volatile | 4Gb (128M x 32) | SDRAM - Mobile LPDDR2 | - | - | -40°C ~ 125°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | - | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 4G PARALLEL 533MHZ | - | - | - | Volatile | 4Gb (128M x 32) | SDRAM - Mobile LPDDR2 | - | - | -40°C ~ 105°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | - | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 2G PARALLEL 533MHZ | - | - | - | Volatile | 2Gb (64M x 32) | SDRAM - Mobile LPDDR2 | - | - | -40°C ~ 85°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | - | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 4G PARALLEL 134FBGA | 134-WFBGA | - | Tray | Volatile | 4Gb (128M x 32) | SDRAM - Mobile LPDDR2 | - | Surface Mount | -40°C ~ 85°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | 134-FBGA (10x11.5) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 4G PARALLEL 134FBGA | 134-WFBGA | - | Tray | Volatile | 4Gb (128M x 32) | SDRAM - Mobile LPDDR2 | - | Surface Mount | -30°C ~ 85°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | 134-FBGA (10x11.5) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 4G PARALLEL 134FBGA | 134-WFBGA | - | Tray | Volatile | 4Gb (256M x 16) | SDRAM - Mobile LPDDR2 | - | Surface Mount | -40°C ~ 85°C (TC) | Obsolete | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | 134-FBGA (10x11.5) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 2G PARALLEL 134VFBGA | 134-VFBGA | - | Tray | Volatile | 2Gb (64M x 32) | SDRAM - Mobile LPDDR2 | - | Surface Mount | -40°C ~ 125°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | 134-VFBGA (10x11.5) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 2G PARALLEL 134VFBGA | 134-VFBGA | - | Tray | Volatile | 2Gb (64M x 32) | SDRAM - Mobile LPDDR2 | - | Surface Mount | -40°C ~ 105°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | 134-VFBGA (10x11.5) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 1G PARALLEL 134VFBGA | 134-VFBGA | - | Tray | Volatile | 1Gb (32M x 32) | SDRAM - Mobile LPDDR2 | - | Surface Mount | -40°C ~ 105°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | 134-VFBGA (10x11.5) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 1G PARALLEL 134VFBGA | 134-VFBGA | - | Tray | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR2 | - | Surface Mount | -40°C ~ 85°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | 134-VFBGA (10x11.5) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC DRAM 1G PARALLEL 134VFBGA | 134-VFBGA | - | Tray | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR2 | - | Surface Mount | -40°C ~ 125°C (TC) | Active | DRAM | 533MHz | - | Parallel | 1.14 V ~ 1.95 V | 134-VFBGA (10x11.5) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC FLASH 64M PARALLEL 88VFBGA | 88-VFBGA | - | Tray | Non-Volatile | 64Mb (4M x 16) | FLASH - NOR | 70ns | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | Flash | 66MHz | 70ns | Parallel | 1.7 V ~ 2 V | 88-VFBGA (8x10) | 0 | 2100 | |||
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siehe | Micron Technology Inc. | IC FLASH 32M PARALLEL 44VFBGA | 44-VFBGA | - | Tray | Non-Volatile | 32Mb (2M x 16) | FLASH - NOR | 70ns | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | Flash | 66MHz | 70ns | Parallel | 1.7 V ~ 2 V | 44-VFBGA (7.5x5) | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 512K I2C 400KHZ 8SOIJ | 8-SOIC (0.209", 5.30mm Width) | - | Tape & Reel (TR) | Non-Volatile | 512Kb (64K x 8) | EEPROM | 900ns | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 400kHz | 5ms | I²C | 2.5 V ~ 5.5 V | 8-SOIJ | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 2K I2C 400KHZ 8DFN | 8-VFDFN Exposed Pad | - | Tube | Non-Volatile | 2Kb (256 x 8) | EEPROM | 900ns | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 400kHz | 1ms | I²C | 4.5 V ~ 5.5 V | 8-DFN (2x3) | 0 | 2100 | |||
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siehe | Cypress Semiconductor Corp | IC SRAM 256K PARALLEL 28DIP | 28-DIP (0.300", 7.62mm) | - | Tube | Volatile | 256Kb (32K x 8) | SRAM - Asynchronous | 25ns | Through Hole | 0°C ~ 70°C (TA) | Obsolete | SRAM | - | 25ns | Parallel | 4.5 V ~ 5.5 V | 28-PDIP | 0 | 2100 | |||
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siehe | Cypress Semiconductor Corp | IC SRAM 256K PARALLEL 28DIP | 28-DIP (0.300", 7.62mm) | - | Tube | Volatile | 256Kb (32K x 8) | SRAM - Asynchronous | 25ns | Through Hole | 0°C ~ 70°C (TA) | Obsolete | SRAM | - | 25ns | Parallel | 4.5 V ~ 5.5 V | 28-PDIP | 0 | 2100 | |||
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siehe | Cypress Semiconductor Corp | IC SRAM 256K PARALLEL 28DIP | 28-DIP (0.300", 7.62mm) | - | Tube | Volatile | 256Kb (32K x 8) | SRAM - Asynchronous | 15ns | Through Hole | 0°C ~ 70°C (TA) | Obsolete | SRAM | - | 15ns | Parallel | 4.5 V ~ 5.5 V | 28-PDIP | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 1K SPI 2MHZ 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Volatile | 1Kb (128 x 8, 64 x 16) | EEPROM | - | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 2MHz | 10ms | SPI | 1.8 V ~ 5.5 V | 8-SOIC | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 16K SPI 2MHZ 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Volatile | 16Kb (2K x 8, 1K x 16) | EEPROM | - | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 2MHz | 10ms | SPI | 2.7 V ~ 5.5 V | 8-SOIC | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 16K SPI 2MHZ 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Volatile | 16Kb (2K x 8, 1K x 16) | EEPROM | - | Through Hole | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 2MHz | 10ms | SPI | 2.7 V ~ 5.5 V | 8-PDIP | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 4K SPI 20MHZ 8TSSOP | 8-TSSOP (0.173", 4.40mm Width) | - | Tube | Non-Volatile | 4Kb (512 x 8) | EEPROM | - | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 20MHz | 5ms | SPI | 1.8 V ~ 5.5 V | 8-TSSOP | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 16K I2C 400KHZ 8TSSOP | 8-TSSOP (0.173", 4.40mm Width) | - | Tube | Non-Volatile | 16Kb (2K x 8) | EEPROM | 4.5µs | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 400kHz | 5ms | I²C | 1.8 V ~ 5.5 V | 8-TSSOP | 0 | 2100 | |||
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siehe | Cypress Semiconductor Corp | IC SRAM 64K PARALLEL 28DIP | 28-DIP (0.300", 7.62mm) | - | Tube | Volatile | 64Kb (8K x 8) | SRAM - Asynchronous | 35ns | Through Hole | 0°C ~ 70°C (TA) | Obsolete | SRAM | - | 35ns | Parallel | 4.5 V ~ 5.5 V | 28-PDIP | 0 | 2100 | |||
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siehe | Cypress Semiconductor Corp | IC SRAM 64K PARALLEL 28DIP | 28-DIP (0.300", 7.62mm) | - | Tube | Volatile | 64Kb (8K x 8) | SRAM - Asynchronous | 25ns | Through Hole | 0°C ~ 70°C (TA) | Obsolete | SRAM | - | 25ns | Parallel | 4.5 V ~ 5.5 V | 28-PDIP | 0 | 2100 | |||
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siehe | Cypress Semiconductor Corp | IC SRAM 64K PARALLEL 28DIP | 28-DIP (0.300", 7.62mm) | - | Tube | Volatile | 64Kb (8K x 8) | SRAM - Asynchronous | 20ns | Through Hole | 0°C ~ 70°C (TA) | Obsolete | SRAM | - | 20ns | Parallel | 4.5 V ~ 5.5 V | 28-PDIP | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 2K I2C 400KHZ 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Volatile | 2Kb (256 x 8) | EEPROM | 900ns | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 400kHz | 5ms | I²C | 4.5 V ~ 5.5 V | 8-SOIC | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 2K I2C 400KHZ 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Volatile | 2Kb (256 x 8) | EEPROM | 900ns | Through Hole | -40°C ~ 85°C (TA) | Obsolete | EEPROM | 400kHz | 5ms | I²C | 4.5 V ~ 5.5 V | 8-PDIP | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 1M I2C 400KHZ 8SOIJ | 8-SOIC (0.209", 5.30mm Width) | - | Tape & Reel (TR) | Non-Volatile | 1Mb (128K x 8) | EEPROM | 900ns | Surface Mount | -40°C ~ 125°C (TA) | Active | EEPROM | 400kHz | 5ms | I²C | 2.5 V ~ 5.5 V | 8-SOIJ | 0 | 2100 | |||
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siehe | Microchip Technology | IC EEPROM 1M I2C 400KHZ 8SOIJ | 8-SOIC (0.209", 5.30mm Width) | - | Tape & Reel (TR) | Non-Volatile | 1Mb (128K x 8) | EEPROM | 900ns | Surface Mount | -40°C ~ 85°C (TA) | Active | EEPROM | 400kHz | 5ms | I²C | 2.5 V ~ 5.5 V | 8-SOIJ | 0 | 2100 |
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