- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
21 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
26,054
Verfügbar auf Lager
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ON Semiconductor | MOSFET 12V Industrial Relay Inductive Load | 6 V | SMD/SMT | SC-70-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 14 V | 500 mA | 900 mOhms | Enhancement | |||||
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Ein Angebot |
5,256
Verfügbar auf Lager
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ON Semiconductor | MOSFET 5V Dual Integrated Relay Inductive Load | 6 V | SMD/SMT | SC-70-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 6 V | 500 mA | 900 mOhms | Enhancement | |||||
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Ein Angebot |
3,646
Verfügbar auf Lager
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Panasonic | MOSFET Nch+Nch MOSFET 2.9x2.8mm Flat lead | 20 V | SMD/SMT | WMini-8 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 33 V | 6.5 A | 20 mOhms | 2.5 V | 3.8 nC | Enhancement | |||
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Ein Angebot |
1,245
Verfügbar auf Lager
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Texas Instruments | MOSFET 20V PCH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.6 A | 150 mOhms, 285 mOhms | - 0.8 V | 1.9 nC | NexFET | |||
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Ein Angebot |
2,700
Verfügbar auf Lager
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Panasonic | MOSFET SC, Nch+Pch MOS FET Dual, DCDC Converter | +/- 10 V, +/- 10 V | SMD/SMT | SMD-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.9 A, - 1.2 A | 80 mOhms, 100 mOhms | 400 mV, - 1.3 V | Enhancement | ||||
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Ein Angebot |
5,807
Verfügbar auf Lager
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Panasonic | MOSFET Nch+Nch MOSFET 2.0x2.1mm Flat lead | 12 V | SMD/SMT | SOT-363-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 60 V | 100 mA | 12 Ohms | 1.2 V | Enhancement | ||||
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Ein Angebot |
226
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.20V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.2 MOhms, 2.2 MOhms | 2.18 V, 2.18 V | Enhancement | ||||
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Ein Angebot |
20
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.50V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | |||||||||||
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siehe | Panasonic | MOSFET 30V Dual N-ch Power MOSFET 6.15x5.1mm | SMD/SMT | HSO-8 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 30 V | 40 A | 10 mOhms | 1 V to 3 V | 6.3 nC | ||||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.70V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | ||||||||||||
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siehe | Panasonic | MOSFET 30V Dual N-ch Power MOSFET 6.15x5.1mm | SMD/SMT | HSO-8 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 30 V | 46 A | 10 mOhms | 1.3 V to 3 V | 6.3 nC | ||||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.30V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | ||||||||||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.10V | 10.6 V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | 10.6 V | 80 mA | 17 GOhms | 2.08 V | Enhancement | |||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.80V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | ||||||||||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.60V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | ||||||||||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.40V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | ||||||||||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.00V | 10.6 V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | 10.6 V | 80 mA | 16 GOhms | 1.98 V | Enhancement | |||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=1.80V | 10.6 V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | 10.6 V | 80 mA | 14 GOhms | 1.78 V | Enhancement | |||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=1.90V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | ||||||||||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=1.60V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | ||||||||||||
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siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=1.70V | 10.6 V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | 10.6 V | 80 mA | 13 GOhms | 1.68 V | Enhancement |
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