Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Package / Case :
Packaging :
Rds On - Drain-Source Resistance :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BUK7613-60E,118
1+
$0.4320
10+
$0.3668
100+
$0.2816
500+
$0.2488
800+
$0.1964
Ein Angebot
RFQ
480
Verfügbar auf Lager
Nexperia MOSFET N-channel TrenchMOS standard level FET 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 58 A 9.44 mOhms 3 V 22.9 nC Enhancement
BUK7E13-60E,127
5000+
$0.1344
10000+
$0.1296
25000+
$0.1256
siehe
RFQ
Nexperia MOSFET N-channel TrenchMOS standard level FET 20 V SMD/SMT TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 58 A 9.6 mOhms 3 V 22.9 nC Enhancement