- Hersteller :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
7 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,350
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 30V 8A 4.4W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.013 Ohms, 0.013 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
2,190
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23 A, 23 A | 0.012 Ohms, 0.012 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
Ein Angebot |
2,780
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 30 A, 30 A | 21 mOhms, 21 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
Ein Angebot |
2,925
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10 mOhms, 10 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET Dual N-Channel 40V PowerPAK | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 0.0079 Ohms, 0.0079 Ohms | 2.5 V, 2.5 V | 30 nC, 30 nC | Enhancement | ||||
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siehe | Vishay / Siliconix | MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 7.5 A, - 7.5 A | 0.028 Ohms, 0.028 Ohms | - 2.5 V, - 2.5 V | 30 nC, 30 nC | Enhancement | TrenchFET | ||||
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siehe | Vishay / Siliconix | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23 A, 23 A | 0.0223 Ohms, 0.0223 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement |
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