- Hersteller :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,578
Verfügbar auf Lager
|
ON Semiconductor | MOSFET T6 60V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13.3 mOhms | 1.2 V | 9.5 nC | Enhancement | ||
|
|
Ein Angebot |
1,586
Verfügbar auf Lager
|
ON Semiconductor | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 1.2 V | 9.5 nC | Enhancement | ||
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Ein Angebot |
1,896
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel 30 V 18.1 mo FET | 20 V | SMD/SMT | LFPAK33-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31.8 A | 20.5 mOhms | 1.62 V | 9.5 nC | Enhancement | ||
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|
|
Ein Angebot |
1,315
Verfügbar auf Lager
|
ON Semiconductor | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.7 mOhms | 1.2 V | 9.5 nC | Enhancement | ||
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|
Ein Angebot |
5,000
Verfügbar auf Lager
|
ON Semiconductor | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.7 mOhms | 1.2 V | 9.5 nC | Enhancement |
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