Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
STP160N3LL	1+ $0.4560 10+ $0.3864 100+ $0.2968 500+ $0.2624	Ein Angebot	PDF RFQ	5,889 Verfügbar auf Lager	STMicroelectronics	MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VI...	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	30 V	120 A	3.2 mOhms	1 V to 2.5 V	42 nC	Enhancement
IRLR3114ZPBF	1+ $0.5960 10+ $0.5040 100+ $0.4040 500+ $0.3532	Ein Angebot	PDF RFQ	1,149 Verfügbar auf Lager	Infineon Technologies	MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC	16 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	130 A	6.5 mOhms	1 V to 2.5 V	40 nC	Enhancement
STL58N3LLH5	1+ $0.4400 10+ $0.3752 100+ $0.2884 500+ $0.2548 3000+ $0.1784	Ein Angebot	PDF RFQ	274 Verfügbar auf Lager	STMicroelectronics	MOSFET Automotive N-channel 30 V, 0.0076 Ohm, 56 A STripFET H5 ...	22 V, - 20 V	SMD/SMT	PowerFLAT-5x6-8	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	30 V	56 A	9 mOhms	1 V to 2.5 V	6.5 nC	Enhancement
AUIRLS3036	3000+ $0.8600	Ein Angebot siehe	PDF RFQ		Infineon Technologies	MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET	16 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	60 V	270 A	2.8 mOhms	1 V to 2.5 V	91 nC	Enhancement