- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
809
Verfügbar auf Lager
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | - 4 V | 64.7 nC | Enhancement | ||
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Ein Angebot |
1,500
Verfügbar auf Lager
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | Enhancement |
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