2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement | OptiMOS | ||
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siehe | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement |
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