- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
7 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
1,947
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET | ||||
|
Ein Angebot |
2,395
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.2 mOhms | 2 V | 30 nC | Enhancement | ||||
|
Ein Angebot |
1,749
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel TrenchMOS logic level FET | 15 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 52 A | 11.2 mOhms | 1.7 V | 9.8 nC | Enhancement | ||||
|
Ein Angebot |
925
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET | ||||
|
Ein Angebot |
4,774
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 20 A | 11.2 mOhms | OptiMOS | |||||||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 80V Vds 46A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 46 A | 11.2 mOhms | 2.5 V | 35 nC | Enhancement | ||||
|
siehe | Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.2 mOhms | 2 V | 30 nC | Enhancement |
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