- Hersteller :
- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
4,084
Verfügbar auf Lager
|
Infineon / IR | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 62 A | 12.6 mOhms | 4 V | 89 nC | Enhancement | |||
|
|
Ein Angebot |
374
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 12.6 mOhms | 9 nC | Enhancement | OptiMOS | |||
|
|
Ein Angebot |
438
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 75V 80A 12.6mOhm Automotive MOSFET | Through Hole | TO-220-3 | + 175 C | Tube | Si | N-Channel | 75 V | 80 A | 12.6 mOhms | 89 nC | ||||||||
|
|
|
siehe | Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 12.6 mOhms | 89 nC | Enhancement |
1 / 1 Seite
