- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
14 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
566
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 22mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 35 mOhms | 32 nC | Enhancement | |||||
|
Ein Angebot |
907
Verfügbar auf Lager
|
Nexperia | MOSFET N-CHAN 80V 47A | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 47 A | 11 mOhms | |||||||
|
Ein Angebot |
1,193
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET U8FL 30V 47A 7.4MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 5.9 mOhms | 1.3 V | 19.3 nC | Enhancement | ||||
|
Ein Angebot |
955
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 33 mOhms | Enhancement | SIPMOS | |||||
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siehe | Nexperia | MOSFET N-CHAN 30V 47A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 13 mOhms | ||||||||
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siehe | Nexperia | MOSFET RAIL PWR-MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 47 A | 25 mOhms | Enhancement | |||||||
|
siehe | Infineon Technologies | MOSFET N-Ch 100V 47A I2PAK-3 SIPMOS | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 47 A | 26 mOhms | Enhancement | SIPMOS | ||||||
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siehe | Infineon Technologies | MOSFET N-Ch 100V 33A I2PAK-3 SIPMOS | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 47 A | 33 mOhms | Enhancement | SIPMOS | ||||||
|
Ein Angebot |
800
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 100V 47A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 0.017 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||
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siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 25 mOhms | Enhancement | |||||||
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siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 28 mOhms | Enhancement | |||||||
|
siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 28 mOhms | Enhancement | |||||||
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siehe | Nexperia | MOSFET TRENCMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 105 V | 47 A | 25 mOhms | Enhancement | |||||||
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siehe | Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 26 mOhms | Enhancement | SIPMOS |
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