Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Packaging :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BUK7E04-40A,127
5000+
$0.3296
10000+
$0.3168
siehe
RFQ
Nexperia MOSFET Trans MOSFET N-CH 40V 198A 3pin(3+Tab) 20 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 198 A 8.5 mOhms 4.4 V 117 nC Enhancement
BUK9604-40A,118
4800+
$0.3152
9600+
$0.3032
siehe
RFQ
Nexperia MOSFET TAPE13 MOSFET 15 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 198 A 4 mOhms     Enhancement
BUK9E04-40A,127
5000+
$0.3296
10000+
$0.3168
siehe
RFQ
Nexperia MOSFET Trans MOSFET N-CH 40V 198A 3Pin(3+Tab) 15 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 198 A 5.9 mOhms 2.3 V 128 nC Enhancement
BUK7604-40A,118
4800+
$0.3528
9600+
$0.3392
siehe
RFQ
Nexperia MOSFET TAPE13 MOSFET 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 198 A 4.5 mOhms     Enhancement
BUK7504-40A,127
5000+
$0.4680
10000+
$0.4520
siehe
RFQ
Nexperia MOSFET RAIL MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 198 A 4.5 mOhms     Enhancement