- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
3,029
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SO-8 | - 20 V, + 30 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12.5 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
Ein Angebot |
1,414
Verfügbar auf Lager
|
Nexperia | MOSFET Dual N-channel 100 V 89 mo FET | 15 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V | 12.5 A | 75.8 mOhms | 1.7 V | 16.8 nC | Enhancement |
1 / 1 Seite