- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
8 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
14,172
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 100 Volt 24 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 26 A | 55 mOhms | Enhancement | |||||
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Ein Angebot |
5,727
Verfügbar auf Lager
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ON Semiconductor | MOSFET NFET SO8FL 60V 26A 24MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 18 mOhms | 2.5 V | 17 nC | ||||
|
Ein Angebot |
1,927
Verfügbar auf Lager
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Nexperia | MOSFET Dual N-channel 100 V | 15 V | SMD/SMT | LFPAK33-5 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V | 26 A | 26.6 mOhms | 1.7 V | 27.3 nC | Enhancement | |||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | |||
|
Ein Angebot |
494
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 42 mOhms | Enhancement | |||||
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siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 10 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 58 mOhms | Enhancement | ||||||
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siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 60 mOhms | Enhancement | ||||||
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siehe | Nexperia | MOSFET N-channel 40 V 29 mo FET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 26 A | 22.7 mOhms | 3 V | 7.9 nC | Enhancement |
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