- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
17 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
193
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | |||
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Ein Angebot |
4,348
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 16 A, 16 A | 53 mOhms, 53 mOhms | 2 V, 2 V | 7 nC, 7 nC | Enhancement | |||
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Ein Angebot |
3,000
Verfügbar auf Lager
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Vishay / Siliconix | MOSFET Dual N-Ch 100V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 17 A, 34 A | 32.5 mOhms, 15.4 mOhms | 1.5 V, 1.5 V | 15 nC, 30 nC | Enhancement | |||
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Ein Angebot |
1,173
Verfügbar auf Lager
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Nexperia | MOSFET BUK7K29-100E/LFPAK56D/REEL 7 | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 29.5 A, 29.5 A | 19.5 mOhms, 19.5 mOhms | 2.4 V, 2.4 V | 38.1 nC, 38.1 nC | Enhancement | |||
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Ein Angebot |
3,194
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 16 A, 16 A | 53 mOhms, 53 mOhms | 2 V, 2 V | 7 nC, 7 nC | Enhancement | |||
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Ein Angebot |
2,780
Verfügbar auf Lager
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Vishay / Siliconix | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 30 A, 30 A | 21 mOhms, 21 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | |||
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Ein Angebot |
477
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 31 mOhms, 31 mOhms | 2.7 V | 9.4 nC | Enhancement | |||
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Ein Angebot |
470
Verfügbar auf Lager
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Nexperia | MOSFET BUK7K134-100E/LFPAK56D/REEL 7 | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 9.8 A, 9.8 A | 97 mOhms, 97 mOhms | 2.4 V, 2.4 V | 10.5 nC, 10.5 nC | Enhancement | |||
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Ein Angebot |
456
Verfügbar auf Lager
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Nexperia | MOSFET BUK7K32-100E/LFPAK56D/REEL 7 | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 29 A, 29 A | 21.5 mOhms, 21.5 mOhms | 2.4 V, 2.4 V | 34 nC, 34 nC | Enhancement | |||
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Ein Angebot |
148
Verfügbar auf Lager
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Nexperia | MOSFET BUK7K45-100E/LFPAK56D/REEL 7 | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 21.4 A, 21.4 A | 30 mOhms, 30 mOhms | 2.4 V, 2.4 V | 25.9 nC, 25.9 nC | Enhancement | |||
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Ein Angebot |
156
Verfügbar auf Lager
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Nexperia | MOSFET BUK7K89-100E/LFPAK56D/REEL 7 | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 13 A, 13 A | 61 mOhms, 61 mOhms | 2.4 V, 2.4 V | 13.6 nC, 13.6 nC | Enhancement | |||
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Ein Angebot |
14,452
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||
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Ein Angebot |
4,948
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||
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Ein Angebot |
5,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | |||
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Ein Angebot |
7,500
Verfügbar auf Lager
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Nexperia | MOSFET BUK9K134-100E/LFPAK56D/REEL 7 | 10 V, 10 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 8.5 A, 8.5 A | 127 mOhms, 127 mOhms | 1.4 V, 1.4 V | 7.4 nC, 7.4 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET MOSFET_(75V,120V( | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | ||||
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Ein Angebot |
5,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-CHANNEL_100+ | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | CoolMOS |
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