- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
14 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
19,594
Verfügbar auf Lager
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 16 V, 16 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A, 50 A | 2.4 mOhms, 700 uOhms | 1.2 V, 1.2 V | 8.4 nC, 29 nC | Enhancement | |||
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Ein Angebot |
5,180
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 1.2 mOhms | 1.2 V, 1.2 V | 8.9 nC, 33 nC | Enhancement | |||
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Ein Angebot |
2,793
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 25V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 2.5 mOhms, 900 uOhms | 1.2 V, 1.2 V | 12 nC, 37 nC | Enhancement | |||
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Ein Angebot |
2,504
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 1.2 mOhms | 1.2 V, 1.2 V | 8.9 nC, 33 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,414
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.8 mOhms | 1.2 V, 1.2 V | 10 nC, 12.8 nC | Enhancement | |||
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Ein Angebot |
790
Verfügbar auf Lager
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Infineon Technologies | MOSFET LV POWER MOS | 16 V, 16 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A, 50 A | 2.4 mOhms, 700 uOhms | 1.2 V, 1.2 V | 8.4 nC, 29 nC | Enhancement | |||
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Ein Angebot |
490
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 25V 40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.7 mOhms, 1.3 mOhms | 1.6 V, 1.6 V | 3 nC, 8.8 nC | OptiMOS | |||
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Ein Angebot |
49
Verfügbar auf Lager
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Infineon Technologies | MOSFET TRANSITIONAL MOSFETS | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.5 mOhms, 900 uOhms | 1 V, 1 V | 6.6 nC, 30.6 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.1 mOhms | 1.2 V, 1.2 V | 10 nC, 18.4 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.8 mOhms | 1.2 V, 1.2 V | 10 nC, 12.8 nC | Enhancement | OptiMOS | |||
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siehe | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | OptiMOS | |||
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siehe | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.1 mOhms | 1.2 V, 1.2 V | 10 nC, 18.4 nC | Enhancement | OptiMOS | |||
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siehe | Infineon Technologies | MOSFET LV POWER MOS | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.5 mOhms, 900 uOhms | 1 V, 1 V | 6.6 nC, 30.6 nC | Enhancement | OptiMOS |
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