- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
16 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
19,594
Verfügbar auf Lager
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 16 V, 16 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A, 50 A | 2.4 mOhms, 700 uOhms | 1.2 V, 1.2 V | 8.4 nC, 29 nC | Enhancement | |||
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Ein Angebot |
21,351
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.2 mOhms, 7.2 mOhms | 1.2 V, 1.2 V | 39 nC, 39 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
17,192
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
4,007
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||
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Ein Angebot |
5,675
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||
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Ein Angebot |
4,680
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||
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Ein Angebot |
193
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | |||
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Ein Angebot |
790
Verfügbar auf Lager
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Infineon Technologies | MOSFET LV POWER MOS | 16 V, 16 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A, 50 A | 2.4 mOhms, 700 uOhms | 1.2 V, 1.2 V | 8.4 nC, 29 nC | Enhancement | |||
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Ein Angebot |
14,452
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||
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Ein Angebot |
4,948
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||
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Ein Angebot |
5,000
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET MOSFET_(75V,120V( | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | ||||
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Ein Angebot |
5,000
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-CHANNEL_100+ | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | CoolMOS | ||
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siehe | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.2 mOhms, 7.2 mOhms | 1.2 V, 1.2 V | 39 nC, 39 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | CoolMOS |
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