MOSFET - Inix Electronic

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3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXTY08N100D2	1+ $0.9440 10+ $0.8000 100+ $0.6400 500+ $0.5640	Ein Angebot	PDF RFQ	1,178 Verfügbar auf Lager	IXYS	MOSFET 8mAmps 1000V	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	1000 V	800 mA	21 Ohms		14.6 nC	Depletion
	IXTA6N50P	1+ $0.5520 10+ $0.4720 100+ $0.3616 500+ $0.3196	Ein Angebot	PDF RFQ	36 Verfügbar auf Lager	IXYS	MOSFET 6 Amps 500V 1.1 Ohms Rds	30 V	SMD/SMT	TO-263-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	6 A	1.1 Ohms	5 V	14.6 nC	Enhancement	PolarHV
	GA05JT03-46	1+ $26.3720 5+ $25.6000 10+ $24.8200 25+ $23.2600	Ein Angebot	PDF RFQ	1 Verfügbar auf Lager	GeneSiC Semiconductor	MOSFET SiC High Temperature JT	30 V	Through Hole	TO-46-3	- 55 C	+ 225 C	Bulk	1 Channel	SiC	N-Channel	300 V	9 A	620 mOhms		14.6 nC	Enhancement

IXTY08N100D2

IXTY08N100D2

IXYS

MOSFET 8mAmps 1000V

Stock : 1,178

1+: $0.9440

10+: $0.8000

100+: $0.6400

500+: $0.5640

IXTA6N50P

IXTA6N50P

IXYS

MOSFET 6 Amps 500V 1.1 Ohms Rds

Stock : 36

1+: $0.5520

10+: $0.4720

100+: $0.3616

500+: $0.3196

GA05JT03-46

GA05JT03-46

GeneSiC Semiconductor

MOSFET SiC High Temperature JT

Stock : 1

1+: $26.3720

5+: $25.6000

10+: $24.8200

25+: $23.2600

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