- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DFN1010D-3 (1)
- EMH-8 (1)
- HSOP-8 (1)
- LFPAK56-5 (1)
- MicroFET-6 (1)
- PowerFLAT-3.3x3.3-8 (1)
- PowerFLAT-5x6-8 (2)
- PowerFLAT-5x6-VHV-8 (1)
- PowerPAK-1212-8 (1)
- SO-8 (1)
- SOIC-8 (1)
- SOT-223-3 (1)
- SOT-223-4 (3)
- SOT-23-3 (5)
- SOT-457-6 (1)
- SOT-457T-6 (2)
- SOT-89-3 (1)
- SSOT-3 (1)
- TDSON-8 (3)
- TO-220-3 (7)
- TO-220FP-3 (8)
- TO-220FP-5 (1)
- TO-251-3 (5)
- TO-252-3 (14)
- TO-262-3 (2)
- TO-263-3 (3)
- TO-281-3 (2)
- TSDSON-8 (4)
- TSOP-6 (2)
- WDFN-8 (1)
- WLCSP-4 (1)
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 2.6 A (1)
- - 2.8 A (1)
- - 3 A (1)
- - 3.2 A (1)
- - 3.5 A (1)
- - 4 A (2)
- - 4.1 A (1)
- - 4.5 A (1)
- - 5 A (1)
- - 6 A (2)
- - 9 A (1)
- 1.5 A (1)
- 1.9 A (2)
- 11 A (1)
- 17 A (1)
- 2 A (1)
- 2.5 A (1)
- 2.6 A (2)
- 2.9 A (2)
- 20 A (1)
- 21 A (6)
- 3 A (1)
- 30 A (1)
- 33 A (1)
- 34 A (1)
- 4 A (2)
- 4.3 A (1)
- 4.4 A (1)
- 40 A (2)
- 5 A (9)
- 5.7 A (1)
- 57 A (1)
- 6 A (1)
- 6.2 A (3)
- 7 A (7)
- 7.3 A (2)
- 7.5 A (1)
- 8 A (11)
- 80 A (1)
- 82 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.032 Ohms (1)
- 0.05 Ohms (1)
- 0.057 Ohms (1)
- 0.084 Ohms (1)
- 0.13 Ohms (1)
- 1 Ohms (1)
- 1.15 Ohms (6)
- 1.5 Ohms (1)
- 110 mOhms (1)
- 133 mOhms (1)
- 150 mOhms (1)
- 185 mOhms (1)
- 2.2 mOhms (1)
- 2.4 Ohms (1)
- 2.8 Ohms (1)
- 20 mOhms (1)
- 20.8 mOhms (1)
- 200 mOhms (1)
- 21.5 mOhms (1)
- 22 mOhms (2)
- 23 mOhms (1)
- 3.3 Ohms (1)
- 30 mOhms (3)
- 35 mOhms (1)
- 36 mOhms (2)
- 4 mOhms (1)
- 4 Ohms (1)
- 4.9 Ohms (1)
- 42 mOhms (2)
- 44 mOhms (3)
- 45 mOhms (1)
- 450 mOhms (2)
- 5 mOhms (2)
- 5.2 mOhms (1)
- 5.6 Ohms (1)
- 5.8 mOhms (1)
- 500 mOhms (8)
- 540 mOhms (2)
- 55 mOhms (1)
- 550 mOhms (1)
- 58 mOhms (1)
- 59 mOhms (1)
- 6.7 mOhms (1)
- 644 mOhms (2)
- 68 mOhms (1)
- 680 mOhms (3)
- 7.4 mOhms (1)
- 730 mOhms (1)
- 8.1 mOhms (1)
- 80 mOhms (1)
- 820 mOhms (1)
- 90 mOhms (2)
- 900 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
80 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
25,053
Verfügbar auf Lager
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.4 A | 36 mOhms | 400 mV | 12 nC | Enhancement | ||||
|
Ein Angebot |
9,470
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 24 V | 7 A | 23 mOhms | 0.9 V | 12 nC | Enhancement | PowerTrench | |||
|
Ein Angebot |
8,521
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.3 A | 0.057 Ohms | 1.5 V | 12 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
9,192
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 30V 57A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 57 A | 5.2 mOhms | 12 nC | OptiMOS | |||||
|
Ein Angebot |
4,031
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 35 mOhms | 1.8 V | 12 nC | PowerTrench | |||||
|
Ein Angebot |
10,604
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 42 mOhms | 2 V | 12 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
3,038
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET UNIFET2 500V | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.5 Ohms | 12 nC | Enhancement | |||||
|
Ein Angebot |
7,959
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 36 mOhms | 3 V | 12 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
8,615
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel 60 V 25 mo FET | 10 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 34 A | 20.8 mOhms | 1.7 V | 12 nC | |||||
|
Ein Angebot |
4,193
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 60V 8A 33W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 0.05 Ohms | 1.5 V | 12 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
3,934
Verfügbar auf Lager
|
Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 82 A | 4 mOhms | 1.2 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
2,447
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSF... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
2,167
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
8,680
Verfügbar auf Lager
|
ON Semiconductor | MOSFET PCH+PCH 1.8V DRIVE SERIES | 10 V | SMD/SMT | EMH-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 133 mOhms | 12 nC | ||||||
|
Ein Angebot |
2,867
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | PowerFLAT-3.3x3.3-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 30 mOhms | 1 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
4,702
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 50V DUAL N-CH HEXFET 130mOhms 12nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 50 V | 3 A | 200 mOhms | 12 nC | Enhancement | |||||
|
Ein Angebot |
780
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 60V N-channel LL PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 2.2 mOhms | 3.2 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
899
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 100V 11A 5-Pin | 20 V | Through Hole | TO-220FP-5 | - 55 C | Tube | 2 Channel | Si | N-Channel | 100 V | 11 A | 58 mOhms | 12 nC | Enhancement | ||||||
|
Ein Angebot |
4,039
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -100V -4A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4 A | 644 mOhms | - 4 V | 12 nC | Enhancement | SIPMOS | |||
|
Ein Angebot |
2,464
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 800V 1.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.8 Ohms | 3 V | 12 nC | CoolMOS | ||||
|
Ein Angebot |
755
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 900 mOhms | 3 V | 12 nC | Enhancement | |||||
|
Ein Angebot |
902
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
4,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 5 mOhms | 1.2 V | 12 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
2,237
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 30 mOhms | 1 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4 Ohms | 3.75 V | 12 nC | Enhancement | SuperMesh | |||
|
Ein Angebot |
2,479
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET DPAK 600V 5.9A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 820 mOhms | 2 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
990
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | |||||
|
Ein Angebot |
2,930
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 30 mOhms | 1 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
700
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 900 mOhms | 3 V | 12 nC | Enhancement | |||||
|
Ein Angebot |
1,200
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 5 mOhms | 1.2 V | 12 nC | Enhancement | OptiMOS |
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