- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
24 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,890
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PT5 150V/20V Nch Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 72 A | 19 mOhms | 2 V | 59 nC | Enhancement | PowerTrench | ||
|
|
Ein Angebot |
3,634
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | |||
|
|
Ein Angebot |
913
Verfügbar auf Lager
|
Nexperia | MOSFET N-CH 40V 1.1 mOhm logic level MOSFET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.1 mOhms | 1.7 V | 59 nC | Enhancement | |||
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|
|
Ein Angebot |
968
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel 40 V 1.55 mo FET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.45 mOhms | 1.46 V | 59 nC | Enhancement | |||
|
|
Ein Angebot |
1,683
Verfügbar auf Lager
|
Nexperia | MOSFET N-CH 100V STD LEVEL MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 68 A | 25 mOhms | 4.6 V | 59 nC | Enhancement | |||
|
|
Ein Angebot |
3,871
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22 mOhms | - 350 mV | 59 nC | Enhancement | |||
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|
|
Ein Angebot |
1,947
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET | |||
|
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Ein Angebot |
2,408
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 2.95 mOhms | 1.7 V | 59 nC | ||||
|
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Ein Angebot |
573
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 70 mOhms | - 1 V | 59 nC | Enhancement | |||
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|
|
Ein Angebot |
561
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 2 V to 4 V | 59 nC | Enhancement | |||
|
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Ein Angebot |
194
Verfügbar auf Lager
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | Through Hole | TO-251-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement | |||||
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Ein Angebot |
925
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET | |||
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|
|
Ein Angebot |
5,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | OptiMOS | ||
|
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Ein Angebot |
250
Verfügbar auf Lager
|
Texas Instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.8 mOhms | 1.5 V | 59 nC | Enhancement | NexFET | ||
|
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Ein Angebot |
12,000
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 42 A | 5.5 mOhms | 3.4 V | 59 nC | PowerTrench | |||
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siehe | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 4 V | 59 nC | Enhancement | ||||
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siehe | ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 2.8 mOhms | 1 V | 59 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement | ||||||
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siehe | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 4 V | 59 nC | Enhancement | ||||
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siehe | Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22 mOhms | - 350 mV | 59 nC | Enhancement | ||||
|
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Ein Angebot |
2,497
Verfügbar auf Lager
|
Texas Instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.8 mOhms | 1.5 V | 59 nC | Enhancement | |||
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siehe | Toshiba | MOSFET U-MOSVIII-H 80V 100A 59nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.3 mOhms | 2 V to 4 V | 59 nC | UMOSVIII | ||||
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siehe | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement | ||||||
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siehe | Infineon / IR | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement |
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