- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DirectFET-SC (2)
- HiP247-3 (1)
- HSMT-8 (1)
- MicroFET-6 (1)
- Power-33-8 (2)
- Power-56-8 (1)
- PowerFLAT-2x2-6 (1)
- PowerFLAT-3.3x3.3-8 (3)
- PowerFLAT-8x8-HV-5 (1)
- SO-8 (7)
- SOIC-8 (1)
- SOP-Advance-8 (3)
- SOT-23-6 (1)
- SOT-363T-6 (1)
- SOT-457-6 (1)
- SOT-563T-6 (1)
- TDSON-8 (1)
- TO-220-3 (11)
- TO-220FP-3 (6)
- TO-247-3 (4)
- TO-251-3 (2)
- TO-252-3 (13)
- TO-262-3 (3)
- TO-263-3 (3)
- TO-281-3 (2)
- TSMT-8 (1)
- TSOP-6 (2)
- VSONP-8 (1)
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 13 A (1)
- - 27 A (1)
- - 3 A (1)
- - 5.3 A (2)
- - 6.5 A (1)
- - 7 A (2)
- - 8 A (2)
- - 9 A (2)
- 10 A (1)
- 11 A (5)
- 12 A (8)
- 13 A (2)
- 13.5 A (1)
- 20 A (1)
- 25 A (1)
- 26 A (1)
- 3.5 A (1)
- 3.8 A (4)
- 30 A (1)
- 33 A (1)
- 34 A (1)
- 36 A (1)
- 43 A (4)
- 44 A (2)
- 49 A (1)
- 50 A (1)
- 58 A (2)
- 6 A (9)
- 6.5 A (3)
- 64 A (1)
- 7.3 A (1)
- 8 A (8)
- 9 A (4)
- Rds On - Drain-Source Resistance :
-
- 0.079 Ohms (2)
- 1.7 Ohms (1)
- 1.95 mOhms (1)
- 10.1 mOhms (1)
- 10.5 mOhms (1)
- 11 mOhms (2)
- 11.3 mOhms (1)
- 14.5 mOhms (1)
- 14.9 mOhms (1)
- 15.8 mOhms (4)
- 16 mOhms (1)
- 2 Ohms (3)
- 20 mOhms (1)
- 20 Ohms (1)
- 20.5 mOhms (1)
- 22.5 mOhms (3)
- 24 mOhms (1)
- 27 mOhms (1)
- 28 mOhms (1)
- 29 mOhms (1)
- 297 mOhms (5)
- 30 mOhms (2)
- 308 mOhms (1)
- 32 mOhms (1)
- 340 mOhms (3)
- 350 mOhms (3)
- 36 mOhms (1)
- 374 mOhms (1)
- 44 mOhms (1)
- 440 mOhms (2)
- 445 mOhms (1)
- 46 mOhms (1)
- 470 mOhms (1)
- 5.7 mOhms (1)
- 500 mOhms (1)
- 58 mOhms (2)
- 594 mOhms (4)
- 6.6 mOhms (1)
- 6.8 mOhms (1)
- 60 mOhms (1)
- 64 mOhms (1)
- 660 mOhms (1)
- 7.7 mOhms (1)
- 7.8 mOhms (1)
- 800 mOhms (4)
- 85 mOhms (1)
- 850 mOhms (4)
- 99 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
77 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
391
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 445 mOhms | 3 V | 22 nC | Enhancement | |||
|
|
Ein Angebot |
111,683
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.3 A | 0.079 Ohms | - 2.5 V | 22 nC | Enhancement | TrenchFET | ||
|
|
Ein Angebot |
10,643
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 22 nC | Enhancement | OptiMOS | ||
|
|
Ein Angebot |
1,479
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener embedded, IPAK PKG | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | ||
|
|
Ein Angebot |
1,663
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PT5 150/25V PchMOSFET | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 99 mOhms | - 2.8 V | 22 nC | PowerTrench Power Clip | |||
|
|
Ein Angebot |
1,039
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | ||
|
|
Ein Angebot |
3,274
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 20 A | 5.7 mOhms | 22 nC | Enhancement | ||||
|
|
|
Ein Angebot |
751
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 470 mOhms | 3 V | 22 nC | Enhancement | |||
|
|
Ein Angebot |
599
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | |||
|
|
|
Ein Angebot |
3,698
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 11mOhms 22nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 11 mOhms | 22 nC | Enhancement | ||||
|
|
|
Ein Angebot |
1,323
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | ||||
|
|
Ein Angebot |
2,409
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 4 V | 22 nC | Enhancement | |||
|
|
Ein Angebot |
2,446
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650 V 0.308 Ohm 11A MDmesh M5 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 340 mOhms | 4 V | 22 nC | ||||
|
|
Ein Angebot |
4,800
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 6.6 mOhms | 2.5 V | 22 nC | ||||
|
|
|
Ein Angebot |
1,266
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 4.5 V | 22 nC | SuperFET II | |||
|
|
Ein Angebot |
147
Verfügbar auf Lager
|
IXYS | MOSFET N-CH 100V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6 A | 64 mOhms | 22 nC | |||||
|
|
|
Ein Angebot |
950
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 950V 0.65Ohm typ 8A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | ||||
|
|
Ein Angebot |
2,926
Verfügbar auf Lager
|
STMicroelectronics | MOSFET P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power M... | +/- 20 V | SMD/SMT | PowerFLAT-3.3x3.3-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8 A | 20.5 mOhms | 1 V to 2.5 V | 22 nC | Enhancement | |||
|
|
|
Ein Angebot |
1,508
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | ||
|
|
Ein Angebot |
5,345
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 8 V | SMD/SMT | PowerFLAT-2x2-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 22.5 mOhms | 1 V | 22 nC | Enhancement | |||
|
|
|
Ein Angebot |
397
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | ||||
|
|
Ein Angebot |
1,994
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 8 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22.5 mOhms | 400 mV | 22 nC | Enhancement | |||
|
|
|
Ein Angebot |
2,454
Verfügbar auf Lager
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 64 A | 16 mOhms | 22 nC | Enhancement | ||||
|
|
|
Ein Angebot |
2,372
Verfügbar auf Lager
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | ||
|
|
|
Ein Angebot |
1,590
Verfügbar auf Lager
|
Infineon / IR | MOSFET 30V DUAL N-CH HEXFET 29mOhms 22nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 6.5 A | 46 mOhms | 22 nC | Enhancement | ||||
|
|
|
Ein Angebot |
1,893
Verfügbar auf Lager
|
Infineon / IR | MOSFET 20V DUAL N-CH HEXFET 58mOhms 22nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.5 A | 58 mOhms | - 1 V, 1 V | 22 nC | Enhancement | |||
|
|
|
Ein Angebot |
559
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850mOhm Zener | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | ||
|
|
Ein Angebot |
2,637
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 8 V | SMD/SMT | SOT-23-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7 A | 22.5 mOhms | 1 V | 22 nC | ||||
|
|
|
Ein Angebot |
973
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 7.3 A | 58 mOhms | - 1 V, 1 V | 22 nC | Enhancement | |||
|
|
|
Ein Angebot |
741
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Ch Enh Mode -30V Low Rdson -20Vgss | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 27 A | 20 mOhms | - 1 V | 22 nC | Enhancement |
1 / 3 Seite
