Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge
SCT2450KEC
1+
$3.1720
10+
$2.8640
25+
$2.7320
100+
$2.3720
Ein Angebot
RFQ
1,521
Verfügbar auf Lager
ROHM Semiconductor MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC - 6 V to + 22 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel SiC N-Channel 1200 V 10 A 450 mOhms 1.6 V to 4 V 27 nC
SCT2280KEC
1+
$4.0080
10+
$3.6240
25+
$3.4560
100+
$3.0000
Ein Angebot
RFQ
628
Verfügbar auf Lager
ROHM Semiconductor MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC - 6 V to + 22 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel SiC N-Channel 1200 V 14 A 280 mOhms 1.6 V to 4 V 36 nC