- Rds On - Drain-Source Resistance :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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Ein Angebot |
1,521
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC | - 6 V to + 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 10 A | 450 mOhms | 1.6 V to 4 V | 27 nC | |||
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Ein Angebot |
628
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC | - 6 V to + 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 14 A | 280 mOhms | 1.6 V to 4 V | 36 nC |
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