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3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
1,426
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15.4 mOhms | 2.4 V | 64 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
433
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 50A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 50 A | 15.4 mOhms | Enhancement | OptiMOS | |||||
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Ein Angebot |
500
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 50A I2PAK-3 OptiMOS-T | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 50 A | 15.4 mOhms | Enhancement | OptiMOS |
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