MOSFET - Inix Electronic

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3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	SQ3418AEEV-T1_GE3	1+ $0.3880 10+ $0.3016 100+ $0.2288 500+ $0.1944 3000+ $0.1412	Ein Angebot	PDF RFQ	2,929 Verfügbar auf Lager	Vishay / Siliconix	MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TSOP-6	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	8 A	0.026 Ohms	1.5 V	12.4 nC	Enhancement	TrenchFET
	SQ2318AES-T1_GE3	1+ $0.2560 10+ $0.1892 100+ $0.1408 500+ $0.1192 3000+ $0.0840	Ein Angebot	PDF RFQ	2,969 Verfügbar auf Lager	Vishay / Siliconix	MOSFET N-Channel 40V AEC-Q101 Qualified	+/- 20 V	SMD/SMT	SOT-23-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	8 A	0.026 Ohms	1.5 V	13 nC	Enhancement	TrenchFET
	SQ3418EV-T1_GE3	1+ $0.2720 10+ $0.2016 100+ $0.1496 500+ $0.1268 3000+ $0.0892	Ein Angebot siehe	PDF RFQ		Vishay / Siliconix	MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TSOP-6	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	8 A	0.026 Ohms	1.5 V	12.7 nC	Enhancement

SQ3418AEEV-T1_GE3

SQ3418AEEV-T1_GE3

Vishay / Siliconix

MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

Stock : 2,929

1+: $0.3880

10+: $0.3016

100+: $0.2288

500+: $0.1944

3000+: $0.1412

SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

Vishay / Siliconix

MOSFET N-Channel 40V AEC-Q101 Qualified

Stock : 2,969

1+: $0.2560

10+: $0.1892

100+: $0.1408

500+: $0.1192

3000+: $0.0840

SQ3418EV-T1_GE3

SQ3418EV-T1_GE3

Vishay / Siliconix

MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified

Stock : 0

1+: $0.2720

10+: $0.2016

100+: $0.1496

500+: $0.1268

3000+: $0.0892

Ein Angebot

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