- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
9 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | ||||
|
Ein Angebot |
171
Verfügbar auf Lager
|
IXYS | MOSFET -16.0 Amps -600V 0.720 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 16 A | 720 mOhms | - 4 V | 92 nC | Enhancement | PolarP | |||
|
siehe | IXYS | MOSFET -16.0 Amps -600V 0.720 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 16 A | 720 mOhms | - 4 V | 92 nC | Enhancement | PolarP | ||||
|
Ein Angebot |
55
Verfügbar auf Lager
|
IXYS | MOSFET DIODE Id14 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 720 mOhms | 5.5 V | 61 nC | Enhancement | PolarHV, HiPerFET | |||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 800 V, 0.75 Ohm typ., 7 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||||
|
Ein Angebot |
600
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||||
|
Ein Angebot |
90
Verfügbar auf Lager
|
Taiwan Semiconductor | MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm | 30 V | Through Hole | ITO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 720 mOhms | 2 V | 9.7 nC | Enhancement | ||||
|
Ein Angebot |
18
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 5A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 720 mOhms | 2.5 V | 12.4 nC | Enhancement | CoolMOS |
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