- Hersteller :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Channel Mode :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
381
Verfügbar auf Lager
|
IXYS | MOSFET 4500V 1A HV Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 1 A | 80 Ohms | 3.5 V to 6 V | 40 nC | Enhancement | ||
|
|
Ein Angebot |
4,129
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Chnl 200V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 35 mA | 80 Ohms | Enhancement | ||||
|
|
Ein Angebot |
180
Verfügbar auf Lager
|
IXYS | MOSFET 0.1 Amps 1000V 110 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 100 mA | 80 Ohms | Depletion | ||||
|
|
Ein Angebot |
112
Verfügbar auf Lager
|
IXYS | MOSFET 0.1 Amps 1000V 80 Rds | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 100 mA | 80 Ohms | Enhancement | ||||
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siehe | IXYS | MOSFET 0.1 Amps 1000V 80 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 100 mA | 80 Ohms | Enhancement |
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