- Hersteller :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Channel Mode :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
24,000
Verfügbar auf Lager
|
Microchip Technology | MOSFET 350V 35Ohm | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 350 V | 72 mA | 35 Ohms | Depletion | |||
|
|
Ein Angebot |
11,226
Verfügbar auf Lager
|
Microchip Technology | MOSFET 350V 35Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 350 V | 135 mA | 35 Ohms | Depletion | |||
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siehe | IXYS Integrated Circuits | MOSFET N Ch Dep Mode FET 250V | - 3.9 V | SMD/SMT | SOT-89-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 350 V | 35 Ohms | Depletion | Clare | ||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 100 mA | 35 Ohms | Enhancement | ||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 100 mA | 35 Ohms | Enhancement | ||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 100 mA | 35 Ohms | Enhancement |
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