- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
24,412
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET Digital FET P-Ch | - 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 120 mA | 13 Ohms | Enhancement | |||||
|
Ein Angebot |
304
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1700 V | 2.6 A | 13 Ohms | 3 V | 44 nC | Enhancement | |||
|
Ein Angebot |
2,894
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 25V P-Ch Enh FET 27.2pF 0.35nC | - 4.5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 700 mA | 13 Ohms | - 0.96 V | 0.35 nC | Enhancement | |||
|
Ein Angebot |
43
Verfügbar auf Lager
|
IXYS | MOSFET 1 Amps 1000V 14 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.2 A | 13 Ohms | Enhancement | |||||
|
Ein Angebot |
64
Verfügbar auf Lager
|
IXYS | MOSFET 1 Amps 1000V 14 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.2 A | 13 Ohms | Enhancement | |||||
|
Ein Angebot |
7
Verfügbar auf Lager
|
IXYS | MOSFET 1.4 Amps 1200V 15 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 1.4 A | 13 Ohms | Enhancement | |||||
|
Ein Angebot |
6,843
Verfügbar auf Lager
|
Microchip Technology | MOSFET 500V 13Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 250 mA | 13 Ohms | Enhancement | |||||
|
Ein Angebot |
657
Verfügbar auf Lager
|
Microchip Technology | MOSFET 500V 13Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 200 mA | 13 Ohms | Enhancement | |||||
|
siehe | Diodes Incorporated | MOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W | - 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 17 A | 13 Ohms | - 0.96 V | 0.35 nC | Enhancement | ||||
|
siehe | STMicroelectronics | MOSFET N-Ch 800 V 13 Ohms Zener SuperMESH 1A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1 A | 13 Ohms | 7.7 nC | Enhancement |
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