- Mounting Style :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
27 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
13,717
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 250 mOhms | 0.7 V | 2.6 nC | ||||
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Ein Angebot |
9,795
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.2 A | 250 mOhms | Enhancement | |||||
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Ein Angebot |
13,795
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET Dual PT4 N 20/8V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 1.2 A | 321 mOhms | PowerTrench | ||||||
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Ein Angebot |
7,713
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET NCH DUAL COOL POWERTRENCH MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 1.2 A | 350 mOhms | PowerTrench | |||||
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Ein Angebot |
3,252
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 1.1A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | |||
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Ein Angebot |
3,780
Verfügbar auf Lager
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ON Semiconductor | MOSFET NCH 10V DRIVE SERIES | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 1.2 A | 2.4 Ohms | 3.5 V | 4.2 nC | ||||
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Ein Angebot |
2,922
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 6.4 Ohm 1.2A SuperMesh3 IPAK | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.2 A | 6.7 Ohms | 3.75 V | 9.5 nC | Enhancement | SuperMesh | ||
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Ein Angebot |
930
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 1.1A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | |||
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Ein Angebot |
1,648
Verfügbar auf Lager
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | |||
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Ein Angebot |
3,755
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 20V 1.2A | 8 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 100 mOhms | 500 mV | Enhancement | ||||
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Ein Angebot |
6,877
Verfügbar auf Lager
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ON Semiconductor | MOSFET 25V 1.2A N-Channel | 8 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 1.2 A | 299 mOhms | Enhancement | |||||
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Ein Angebot |
5,975
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 20V 1.2A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 100 mOhms | Enhancement | |||||
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Ein Angebot |
43
Verfügbar auf Lager
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IXYS | MOSFET 1 Amps 1000V 14 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.2 A | 13 Ohms | Enhancement | |||||
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Ein Angebot |
64
Verfügbar auf Lager
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IXYS | MOSFET 1 Amps 1000V 14 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.2 A | 13 Ohms | Enhancement | |||||
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Ein Angebot |
2,854
Verfügbar auf Lager
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Microchip Technology | MOSFET 50V 0.3Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 50 V | 1.2 A | 300 mOhms | Enhancement | |||||
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Ein Angebot |
2,584
Verfügbar auf Lager
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Toshiba | MOSFET Vds=20V Id=1.2A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 390 mOhms | Enhancement | |||||
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Ein Angebot |
20,000
Verfügbar auf Lager
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Nexperia | MOSFET 20V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 270 mOhms | 450 mV | 1.4 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | ||||
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Ein Angebot |
1,973
Verfügbar auf Lager
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Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 1.2 A | 450 mOhms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 500 mOhms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 500 mOhms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 500 mOhms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 1.2 A | 450 mOhms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 1.2 A | 450 mOhms | Enhancement | ||||||
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Ein Angebot |
2,206
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.2 A | 6.7 Ohms | 3.75 V | 9.5 nC | Enhancement | SuperMesh | ||
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siehe | Toshiba | MOSFET Vds=20V Id=1.2A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 210 mOhms | Enhancement | ||||||
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siehe | Toshiba | MOSFET Vds=30V Id=2.3A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 320 mOhms | Enhancement |
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