- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
277
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | |||
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Ein Angebot |
299
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | CoolMOS |
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