- Hersteller :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,339
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 230 mA | 8 Ohms | Enhancement | ||||
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Ein Angebot |
3,502
Verfügbar auf Lager
|
Nexperia | MOSFET 30V 230 MA P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 230 mA | 2.8 Ohms | - 0.9 V | 0.55 nC | Enhancement | ||
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Ein Angebot |
11,738
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Chnl 45V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 45 V | - 230 mA | 14 Ohms | Enhancement | ||||
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|
|
Ein Angebot |
1,764
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 230 mA | 8 Ohms | Enhancement |
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