- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
2,555
Verfügbar auf Lager
|
Infineon / IR | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
|
Ein Angebot |
714
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 105V 41a 0.033 Ohms/VGS=10V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 105 V | 41 A | 25 mOhms | Enhancement | PowerTrench | |||||
|
Ein Angebot |
157
Verfügbar auf Lager
|
Infineon / IR | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
|
Ein Angebot |
12
Verfügbar auf Lager
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 41 A | 240 mOhms | 4 V | 260 nC | Enhancement | ||||||
|
Ein Angebot |
5
Verfügbar auf Lager
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 41 A | 190 mOhms | 2.5 V | 260 nC | Enhancement | |||||
|
siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 41 A | 35 mOhms | Enhancement | |||||||
|
siehe | Infineon Technologies | MOSFET 150V SINGLE N-CH 45mOhms 72nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 72 nC | Enhancement | ||||||
|
siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 10 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 41 A | 34 mOhms | Enhancement | |||||||
|
siehe | IXYS | MOSFET 41 Amps 600V 0.13 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 41 A | 130 mOhms | Enhancement | HyperFET | ||||||
|
siehe | IXYS | MOSFET 44 Amps 600V 0.13W Rds | 20 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 41 A | 130 mOhms | Enhancement | HyperFET | ||||||
|
siehe | IXYS | MOSFET 41 Amps 250V 0.072 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 41 A | 72 mOhms | Enhancement |
1 / 1 Seite