- Hersteller :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
2,711
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SC70-6 P-CH -20V | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.2 A | 135 mOhms | Enhancement | PowerTrench | ||
|
|
Ein Angebot |
25,700
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SSOT-3 P-CH 60V | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.2 A | 170 mOhms | Enhancement | PowerTrench | ||
|
|
siehe | Toshiba | MOSFET Vds=-12V Id=1.2A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 1.2 A | 160 mOhms | Enhancement |
1 / 1 Seite
