- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
14 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
111,683
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.3 A | 0.079 Ohms | - 2.5 V | 22 nC | Enhancement | TrenchFET | ||
|
|
Ein Angebot |
5,000
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SO-8 SGL P-CH -30V | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 50 mOhms | Enhancement | PowerTrench | ||||
|
|
Ein Angebot |
4,654
Verfügbar auf Lager
|
Nexperia | MOSFET 20V P-Channel Trench Mosfet | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 30 mOhms | - 950 mV | 14.7 nC | Enhancement | |||
|
|
Ein Angebot |
8,608
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | |||
|
|
|
Ein Angebot |
1,315
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 5.3 A | 98 mOhms | 19 nC | Enhancement | ||||
|
|
|
Ein Angebot |
644
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 60mOhms 25nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 100 mOhms | 25 nC | Enhancement | ||||
|
|
|
Ein Angebot |
3,685
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | |||
|
|
|
Ein Angebot |
2,877
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.3 A | 0.079 Ohms | - 2.5 V | 22 nC | Enhancement | |||
|
|
|
Ein Angebot |
6,920
Verfügbar auf Lager
|
Nexperia | MOSFET PMV30XPEA/TO-236AB/REEL 7" Q3/ | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 28 mOhms | - 1.25 V | 17 nC | Enhancement | |||
|
|
Ein Angebot |
2,713
Verfügbar auf Lager
|
ON Semiconductor | MOSFET -20V -5.3A P-Channel | 12 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 46 mOhms | Enhancement | |||||
|
|
|
siehe | Diodes Incorporated | MOSFET PMOS SINGLE P-CHANNL 30V 5.3A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 65 mOhms | Enhancement | ||||||
|
|
siehe | Central Semiconductor | MOSFET SMD Small Sig Mosfet Dual P-Ch Enh Mode | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 5.3 A | 83 mOhms | 7 nC | Enhancement | |||||
|
|
|
siehe | Central Semiconductor | MOSFET SMD Small Sig Mosfet P-Channel Enh Mode | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 83 mOhms | 7 nC | Enhancement | |||||
|
|
|
Ein Angebot |
6
Verfügbar auf Lager
|
Infineon / IR | MOSFET 20V FETKY 12 VGS 98 RDS 2.7VmOhm | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 62 mOhms | - 0.7 V | 19 nC | Enhancement |
1 / 1 Seite
