- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
4,549
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 30V 160A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 106 A | 2.1 mOhms | 1.7 V | 47.9 nC | ||||
|
|
Ein Angebot |
800
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 150 nC | Enhancement | |||
|
|
siehe | IXYS | MOSFET 200V 106A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 106 A | 20 mOhms | Enhancement | HyperFET | |||||
|
|
Ein Angebot |
21
Verfügbar auf Lager
|
Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 106 A | 35 mOhms | 3 V | 308 nC | Enhancement |
1 / 1 Seite
