- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
10,071
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 94 A | 5.7 mOhms | Enhancement | PowerTrench | |||||
|
Ein Angebot |
142
Verfügbar auf Lager
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | ||||||
|
Ein Angebot |
513
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | |||||
|
Ein Angebot |
611
Verfügbar auf Lager
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | ||||||
|
Ein Angebot |
46
Verfügbar auf Lager
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | ||||||
|
Ein Angebot |
384
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | ||||||
|
Ein Angebot |
10
Verfügbar auf Lager
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 94 A | 36 mOhms | 3 V | 102 nC | Enhancement | HyperFET | |||
|
Ein Angebot |
114
Verfügbar auf Lager
|
Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 94 A | 35 mOhms | 3 V | 320 nC | Enhancement | ||||||
|
Ein Angebot |
31
Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 94 A | 30 mOhms | 3 V | 505 nC | Enhancement | |||||
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siehe | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | |||||||
|
Ein Angebot |
706
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 55V SINGLE N-CH HEXFET PWR MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 4 V | 63 nC | Enhancement |
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